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PIN PHOTO DIODE
PP403
Absolute Maximum Rating
Part No. PP403 Units Power Dissipation Pd 75 mW Reverse Voltage VR 30 V Operating Temperature Topr -30~+85 C Tstg -30~+100 C Ta = 25C Storage Temperature
Electro-Optical Characteristics
Photo Current Part No. TYP PP403 Units 1 f=1MHz 1.5 A Ip VR 5 V Ee 0.5 mW/cm2 TYP 20 ns Response Time tr . tf VR 10 V RL 1,000 Capacitance CT TYP 7 pF VR 10 V MAX 10 nA Dark Current ID VR 10 V TYP 950 nm Peak Wavelength p VR 0 V TYP 0.64 A/W
Ta = 25C Photo Sensitivity S VR 5 V
Package Dimensions
Unit : mm
Spatial Distribution
Ta = 25C
PIN PHOTO DIODE
PP403
Radiant Illumination vs. Relative Photo Current
101
Relative Photo Current Ip
Ta = 25
Reverse Voltage vs. Photo Current
Ee= 0.5mW/cm2 Ta = 25
Reverse Voltage vs. Dark Current
10-8
Dark Current ID (A)
Ta = 25
10-0
Photo Current Ip (A)
1.8
1.6
10-9
10-1
1.4
10-2 0.01
0.1
1.0
10
1.2 0
5
10 15 20 25 30 35
Reverse Voltage VR (V)
10-10 0
10
20
30
Radiant Illumination Ee (mW/cm2)
Reverse Voltage VR (V)
Ambient Temperature vs. Relative Photo Current
VR= 5V
Ambient Temperature vs. Power Dissipation
100
Power Dissipation P (mW)
Ambient Temperature vs. Dark Current
10-6
Dark Current ID (A)
VR= 10V
Relative Photo Current Ip
1.5
80 60 40 20 0 -25 0 25 50 75 100
10-8
1.0
10-10
0.5 -25 0 25 50 75 100
Ambient Temperature Ta (C)
10-12 -25 0 25 50 75 100
Ambient Temperature Ta (C)
Ambient Temperature Ta (C)
Spectral Sensitivity Characteristics
100
Relative Sensitivity (%)
VR= 0V Ta = 25
Reverse Voltage vs. Terminal Capacitance
Terminal Capacitance CT (pF)
100
Ta = 25
80 60 40 20 0 400 600 800 1000 1200
Wave Length (nm)
10
1 0.1
1
10
100
Reverse Voltage VR (V)

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